Datasheet > CM65R400XP

CM65R400XP

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1349K
描述
TO-220

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CM65R400XP 数据手册

CM65R400XP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R400XP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage Super Junction technology. This high density

process and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R400XX

XXXX

ID (@VGS=10V): 12.7A

RDS_ON(@VGS=10V) : < 410mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

TO-220

TO-220F

CM65R400XP

CM65R400XF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM65R400XP CM65R400XF

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

12.7

7.5

12.7⁴⁾

7.5⁽⁴⁾

51⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

179

1.67

0.7

0.28

3.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Jul. 2022, Rev. 1.0

1 of 6

www.appliedpowermicro.com

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