Datasheet > CM65R550D

CM65R550D

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1216K
描述
TO-251

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CM65R550D 数据手册

CM65R550U/D

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R550U/D is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage Super Junction technology. This high density pro-

cess and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R550X

XXXX

ID (@VGS=10V): 7.7A

RDS_ON(@VGS=10V) : < 555mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

CM65R550U

CM65R550D

TO-252

TO-251

Tape and reel

Tube

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM65R550U CM65R550D

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

7.7

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current ⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

4.9

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

0.7

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

1.4

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Oct. 2021, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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