Datasheet > CM65R550F

CM65R550F

更新时间： 2024-11-29 17:14:59

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
6页	1341K
描述
TO-220F

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CM65R550F 数据手册

CM65R550P/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R550P/F is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage Super Junction technology. This high density pro-

cess and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R550X

XXXX

ID (@VGS=10V): 8A

RDS_ON(@VGS=10V) : < 555mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Ordering Information

Equivalent Circuit and Pin Configuration

P/N

Package Type Packaging

TO-220

TO-220F

CM65R550P

CM65R550F

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Drain-source Voltage

Symbol

Unit

CM65R550P CM65R550F

VDS

VGS

650

±30

Gate-source Voltage

Tc=25°C

8⁴⁾

5⁽⁴⁾

32⁽⁴⁾

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

Total Power Dissipation ⁽³⁾

Tc=100°C

IDM

PD @ Tc=25°C

Derating Factor above 25°C

RθJC

104

0.8

1.2

0.3

3.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

Oct. 2021, Rev. 1.0

1 of 6

www.appliedpowermicro.com

12 3 4 5 6

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