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CM65R310XP PDF预览

CM65R310XP

更新时间: 2024-11-29 17:15:03
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应能微 - APPLIED POWER /
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7页 1477K
描述
TO-220

CM65R310XP 数据手册

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CM65R310XP/F  
N-Channel 650V (D-S) Power MOSFET  
Description  
Applications  
The CM65R310XP/F is the N-Channel enhancement  
mode power field effect transistors with high cell density,  
high voltage Super Junction technology. This high density  
process and design have been optimized switching perfor-  
mance and especially tailored to minimize on-state re-  
sistance, .  
AC/DC load switch  
SMPS  
LED power  
Marking Information  
Features  
X=Package type  
VDS: 650V  
XXXX = Marking Code  
65R310XX  
XXXX  
ID (@VGS=10V): 15A  
RDSON (@VGS=10V) : < 310mΩ  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Equivalent Circuit and Pin Configuration  
Ordering Information  
P/N  
Package Type Packaging  
TO-220  
TO-220F  
CM65R310XP  
CM65R310XF  
TO-220  
Tube  
Tube  
TO-220F  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Maximum  
Parameter  
Symbol  
Unit  
CM65R310XP CM65R310XF  
Drain-source Voltage  
VDS  
VGS  
650  
±30  
V
V
Gate-source Voltage  
Tc=25°C  
15  
9
154)  
9(4)  
58(4)  
185  
35  
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
ID  
Tc=100°C  
A
IDM  
58  
A
Single Pulse Avalanche Energy(5)  
EAS  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJA  
185  
179  
1.67  
65  
mJ  
W
Total Power Dissipation (3)  
0.28  
65  
W/°C  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-to-Ambient  
Thermal Resistance Junction-to-Case (3)  
Junction and Storage Temperature Range  
RθJC  
0.7  
3.6  
TJ,TSTG  
-55 to +150  
Mar. 2023, Rev. 1.2  
1 of 7  
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