Datasheet > CM65R310XF

CM65R310XF

更新时间： 2024-11-29 17:15:03

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
7页	1477K
描述
TO-220F

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CM65R310XF 数据手册

CM65R310XP/F

N-Channel 650V (D-S) Power MOSFET

Description

Applications

The CM65R310XP/F is the N-Channel enhancement

mode power field effect transistors with high cell density,

high voltage Super Junction technology. This high density

process and design have been optimized switching perfor-

mance and especially tailored to minimize on-state re-

sistance, .



AC/DC load switch

SMPS

LED power

Marking Information

Features

X=Package type



VDS: 650V

XXXX = Marking Code

65R310XX

XXXX

ID (@VGS=10V): 15A

RDS_ON(@VGS=10V) : < 310mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

P/N

Package Type Packaging

TO-220

TO-220F

CM65R310XP

CM65R310XF

TO-220

Tube

TO-220F

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Maximum

Parameter

Symbol

Unit

CM65R310XP CM65R310XF

Drain-source Voltage

V_DS

V_GS

650

±30

Gate-source Voltage

Tc=25°C

15⁴⁾

9⁽⁴⁾

58⁽⁴⁾

185

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current⁽²⁾

I_D

Tc=100°C

I_DM

Single Pulse Avalanche Energy⁽⁵⁾

E_AS

PD @ Tc=25°C

Derating Factor above 25°C

RθJA

185

179

1.67

Total Power Dissipation ⁽³⁾

0.28

W/°C

°C/W

°C

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case ⁽³⁾

Junction and Storage Temperature Range

RθJC

0.7

3.6

TJ,TSTG

-55 to +150

Mar. 2023, Rev. 1.2

1 of 7

www.appliedpowermicro.com

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