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CLY29-05 PDF预览

CLY29-05

更新时间: 2024-09-14 22:10:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管射频小信号场效应晶体管放大器局域网
页数 文件大小 规格书
9页 622K
描述
HiRel C-Band GaAs Power-MESFET

CLY29-05 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:14 V
最大漏极电流 (ID):0.7 AFET 技术:METAL SEMICONDUCTOR
最高频带:C BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最小功率增益 (Gp):14 dB认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

CLY29-05 数据手册

 浏览型号CLY29-05的Datasheet PDF文件第2页浏览型号CLY29-05的Datasheet PDF文件第3页浏览型号CLY29-05的Datasheet PDF文件第4页浏览型号CLY29-05的Datasheet PDF文件第5页浏览型号CLY29-05的Datasheet PDF文件第6页浏览型号CLY29-05的Datasheet PDF文件第7页 
CLY29  
HiRel C-Band GaAs Power-MESFET  
HiRel Dis crete and Microwave Semiconductor  
For professional power amplifiers  
For frequencies from 100 MHz to 8 GHz  
Hermetically sealed microwave power package  
Low thermal resistance for  
high voltage application  
Power added efficiency > 55 %  
Space Qualification Expected 1998  
ESA/SCC Detail Spec. No.: 5614/006,  
Type Variant No.s 04 to 06  
ESD: Electros tatic discharge sensitive device, observe handling precautions!  
Type  
Marking Ordering Code  
Pin Configuration Package  
1
2
3
CLY29-00 (ql)  
CLY29-05 (ql)  
CLY29-10 (ql)  
-
see below  
G
S
D
MWP-25  
CLY29-nn: specifies output power level (see electrical characteristics)  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Q62702L117  
on request  
on request  
ES: ESA Space Quality,  
Q62702L116  
(see order instructions for ordering example)  
S e miconductor Group  
1 of 10  
Dra ft D, S e pte mbe r 99  

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