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CLY32-10H PDF预览

CLY32-10H

更新时间: 2024-11-06 21:21:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网放大器晶体管
页数 文件大小 规格书
12页 62K
描述
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN

CLY32-10H 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:14 V最大漏极电流 (Abs) (ID):1.4 A
最大漏极电流 (ID):1.4 AFET 技术:METAL SEMICONDUCTOR
最高频带:C BANDJESD-30 代码:R-CDFM-F2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:6.75 W
最小功率增益 (Gp):11.5 dB认证状态:Not Qualified
参考标准:ESA/SCC 5614/006子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

CLY32-10H 数据手册

 浏览型号CLY32-10H的Datasheet PDF文件第2页浏览型号CLY32-10H的Datasheet PDF文件第3页浏览型号CLY32-10H的Datasheet PDF文件第4页浏览型号CLY32-10H的Datasheet PDF文件第5页浏览型号CLY32-10H的Datasheet PDF文件第6页浏览型号CLY32-10H的Datasheet PDF文件第7页 
CLY32...  
HiRel C- Band GaAs Power- MESFET  
HiRel Discrete and Microwave Semiconductor  
For professional power amplifiers  
For frequencies from 100 MHz to 6 GHz  
Hermetically sealed microwave package  
Low thermal resistance for  
high voltage application  
Power addes efficiency > 53%  
esa Space Qualified  
ESA/SCC Detail Spec. No.: 5614/006  
Type Variante No.s 01 to 03  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
CLY32-00  
CLY32-05  
CLY32-10  
-
-
-
1=G  
1=G  
1=G  
2=S  
3=D  
3=D  
3=D  
-
-
-
MWP-25  
MWP-25  
MWP-25  
2=S  
2=S  
(ql) Testing level: P: Professional testing  
H: High Rel quality  
S: Space quality  
ES: ESA qualified  
CLY32-nn: specifies output power level (see electricial characteristics)  
2007-08-20  
1

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