生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.22 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 14 V | 最大漏极电流 (Abs) (ID): | 1.4 A |
最大漏极电流 (ID): | 1.4 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 6.75 W |
最小功率增益 (Gp): | 11 dB | 认证状态: | Not Qualified |
参考标准: | ESA/SCC 5614/006 | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CLY32-00H | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-00P | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-00S | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-05 | INFINEON |
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HiRel C-Band GaAs Power-MESFET | |
CLY32-05H | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-05P | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-05S | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-10 | INFINEON |
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HiRel C-Band GaAs Power-MESFET | |
CLY32-10H | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M | |
CLY32-10S | INFINEON |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M |