Datasheet > CJU02N60M1

CJU02N60M1

更新时间： 2023-12-06 20:08:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	3146K
描述
TO-252-2L

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CJU02N60M1 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU02N60M1

N-Channel Power MOSFET

I_D

V_(BR)DSS

600V

R_DS(on)MAX

TO-252-2L

2.7Ω 10V

General Description

The high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degrading

performance over time. In addition , this advanced MOSFET is designed

to withstand high energy in avalanche and commutation modes . The

new energy efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed switching

applications in power suppliers, converters and PWM motor controls ,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage transients.

1. GATE

2. DRAIN

3. SOURCE

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(on)Specified at Elevated Temperature

MARKING

EQUIVALENT CIRCUIT

U02N60M1= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GS

600

±30

Gate-Source Voltage

①

Continuous Drain Current

I_D

②

③

Pulsed Drain Current

I_DM

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

100

①

P_D

⑥

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

R_θJC

℃/W

①

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 ~+150

www.jscj-elec.com

Rev. - 1.1

12 3 4 5 6

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