Datasheet > CJU07N06

CJU07N06

更新时间： 2023-12-06 20:00:50

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	4541K
描述
TO-252-2L

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数据手册

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CJU07N06 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

TO-252-2L

CJU07N06 N-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

@10V

77mΩ

60V

88mΩ 4.5V

1. GATE

2. DRAIN

3. SOURCE

DESCRIPTION

The CJU07N06 uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be used in

a wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U07N06 = Device code.

Solid dot = Green molding compound device, if

none, the normal device.

XXXX = Code.

U07N06

XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

7.0

①

Continuous Drain Current

I_D

Pulsed Drain Current

I_DM

E_AS

P_D

Single Pulsed Avalanche Energy

Power Dissipation

Thermal Resistance from Junction to Ambient

R_θJA

100

8.3

℃/W

℃

①

Thermal Resistance from Junction to

R_θJC

Case

Operation Junction and

Storage Temperature Range

T ,

T_stg

-55 ~+150

Rev. - 2.0

www.jscj-elec.com

12 3 4 5 6

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