Datasheet > CJU100N03S

CJU100N03S

更新时间： 2024-09-28 14:55:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2893K
描述
TO-252-2L

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CJU100N03S 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU100N03S N-Channel Power MOSFET

TO-252-2L

I_D

V_(BR)DSS

R_DS(on)TYP

@10V

4.7mΩ

30V

100 A

7.2mΩ 4.5V

1. GATE

2. DRAIN

3. SOURCE

DESCRIPTION

The CJU100N03S uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U100N03S = Device code.

Solid dot = Green molding compound device.

if none, the normal device.

XXXX = Code.

U100N03S

X X X X

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

100

400

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

144

①

P_D

⑥

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

100

℃/W

℃

①

R_θJC

1.42

-55~+150

T ,

T_stg

Operating Junction and

Storage Temperature Range

Rev. - 2.0

www.jscj-elec.com

12 3 4 5

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