Datasheet > CJU110SN04

CJU110SN04

更新时间： 2023-12-06 20:02:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	3205K
描述
TO-252-2L

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数据手册

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CJU110SN04 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU110SN04 N-Channel Power MOSFET

TO-252-2L

I_D

V_(BR)DSS

R_DS(on)TYP

40V

110 A

@10V

3.2mΩ

1. GATE

2. DRAIN

3. SOURCE

DESCRIPTION

The CJU110SN04 uses shielded gate trench technology

and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U110SN04 = Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX = Code

U110SN04



XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

+20/-12

110

Gate-Source Voltage

V_GS

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

440

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

320

①

P_D

⑥

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

100

℃/W

℃

①

1.3

R_θJC

-55~+150

T ,

Operating Junction and

T_stg

Storage Temperature Range

Rev. - 1.0

www.jscj-elec.com

12 3 4 5 6

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