Datasheet > CJU10N10

CJU10N10

更新时间： 2023-12-06 20:08:45

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	4255K
描述
TO-252-2L

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数据手册

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CJU10N10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU10N10

N-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

TO-252-2L

9.6A

100V

110mΩ 10V

GENERAL DESCRIPTION

1. GATE

2. DRAIN

3. SOURCE

The CJU10N10 provide excellent R_DS(ON), low gate charge and

operation with low gate voltages. This device is suitable for use as

a load switch or in PWM applications.

FEATURE

APPLICATION

z Power switching application

Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U10N10= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

100

±20

9.6

V_GS

①

I_D

②

I_DM

③

Single Pulsed Avalanche Energy

150

E_AS

①

100

Maximum Power Dissipation

℃/W

℃

P_D

⑥

R_θJA

Thermal Resistance from Junction to Ambient

①

R_θJC

Thermal Resistance from Junction to Case

4.17

Operating Junction and Storage Temperature Range

T ,

-55~+150

T_stg

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

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