Datasheet > CJU30P10

CJU30P10

更新时间： 2024-09-28 14:52:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2578K
描述
TO-252-2L

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CJU30P10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU30P10

P-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

TO-252-2L

38mΩ -10V

-100V

-30A

41mΩ -4.5V

GENERAL DESCRIPTION

The CJU30P10 uses advanced trench technology and design to provide excellent

1. GATE

2. DRAIN

3. SOURCE

R_DS(on)with low gate charge. It can be used in a wide variety of applications.

FEATURE

APPLICATION



Advanced trench process technology



Power management in notebook computer

Reliable and rugged

Portable equipment and battery powered systems

High density cell design for ultra low On-Resistance

EQUIVALENT CIRCUIT

MARKING

U30P10 = Device code.

Solid dot = Green molding compound device.

if none, the normal device.



XXXX = Code.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

-100

±20

Unit

Gate-Source Voltage

V_GS

①

Continuous Drain Current

I_D

-30

②

Pulsed Drain Current

I_DM

-120

240

108

③

E_AS

Single Pulsed Avalanche Energy

Power Dissipation

①

P_D

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

100

℃/W

℃

①

R_θJC

1.15

Junction Temperature and Storage Temperature Range

-55 ~+150

T_JT_stg

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

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