Datasheet > CJU110N03

CJU110N03

更新时间： 2024-09-28 14:54:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	2263K
描述
TO-252-2L

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数据手册

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CJU110N03 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU110N03 N-Channel Power MOSFET

TO-252-2L

I_D

V_(BR)DSS

R_DS(on)TYP

@10V

4.0mΩ

30V

110A

6.0mΩ 5.0V

DESCRIPTION

1. GATE

2. DRAIN

3. SOURCE

The CJU110N03 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

CJU110N03 = Device code

Solid dot indicates RoHS Compliant and Halogen-Free;

without solid dot indicates RoHS Compliant

XXXX = Code



XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

Limit

Unit

V_DS

V_GS

I_D

Gate-Source Voltage

±20

110

380

120

①

②

Continuous Drain Current

Pulsed Drain Current

I_DM

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

P_D

①

⑥

①

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

R_θJC

100

1.49

℃/W

℃

T_J,Tstg

-55~+150

Operating Junction and

Storage Temperature Range

Rev. - 2.0

www.jscj-elec.com

12 3 4 5 6

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