Datasheet > CJU30P03A

CJU30P03A

更新时间： 2023-12-06 20:11:32

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
7页	2902K
描述
TO-252-2L

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CJU30P03A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU30P03A

P-Channel Power MOSFET

TO-252-2L

I_D

R_DS(on)TYP

V_(BR)DSS

13mΩ@-10V

-30A

-30V

19mΩ 4.5V

1. GATE

2. DRAIN

3. SOURCE

General Description

The CJU30P03A uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications.

FEATURES



High density cell design for ultra low R_DS(on)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS



Special process technology for high ESD capability

Excellent package for good heat dissipation

APPLICATIONS



Hard switched and high frequency circuits



Power switching application



Uninterruptible power supply

MARKING

EQUIVALENT CIRCUIT

U30P03A= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

MAXIMUM RATINGS ( T_J=25℃ unless otherwise noted )

Parameter

Symbol

V_DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

-30

①

Continuous Drain Current

I_D

①②

Pulsed Drain Current

I_DM

-120

100

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

⑤

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

100

2.2

℃/W

℃

①

R_θJC

-55~+150

Operating Junction and

Storage Temperature Range

T ,

T_STG

Rev. - 1.0

www.jscj-elec.com

12 3 4 5 6 7

中文翻译

下载PDF

与CJU30P03A相关器件

型号	品牌	获取价格	描述	数据表
CJU30P10	CJ	获取价格	TO-252-2L
CJU40P03	CJ	获取价格	TO-252-2L
CJU40P04	CJ	获取价格	TO-252-2L
CJU40P04A	CJ	获取价格	TO-252-2L
CJU40SN06	CJ	获取价格	TO-252-2L
CJU4410	CJ	获取价格	TO-252-2L
CJU4828	CJ	获取价格	TO-252-2L
CJU50N06A	CJ	获取价格	TO-252-2L
CJU55N02	CJ	获取价格	TO-252-2L
CJU60SN08	CJ	获取价格	TO-252-2L