Datasheet > CJU30N10

CJU30N10

更新时间： 2023-12-06 19:46:53

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	1191K
描述
TO-252-2L

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CJU30N10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU30N10 N-Channel Power MOSFET

I_D

R_DS(on)TYP

V_(BR)DSS

TO-252-2L

30A

100V

24mΩ 10V

DESCRIPTION

This advanced high voltage MOSFET is designed to stand high energy in

the avalanche mode and switch efficiently. This new high energy device

also offers a drain-to-source diode fast recovery time. Desighed for high

voltage, high speed switching applications such as power supplies,

1. GATE

2. DRAIN

3. SOURCE

converters, power motor controls and bridge circuits.

FEATURES



High density cell design for ultra low R_DS(on)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS



Special process technology for high ESD capability

Excellent package for good heat dissipation

APPLICATIONS



Hard switched and high frequency circuits



Power switching application



Uninterruptible power supply

MARKING

EQUIVALENT CIRCUIT

U30N10 = Device code.

Solid dot = Green molding compound

device if none, the normal device.

XXXX = Code.

U3300NN1100

XXXXXXXX

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

V_GS

①

I_D

②

I_DM

120

③

Single Pulsed Avalanche Energy

156

E_AS

①

Maximum Power Dissipation

P_D

⑥

R_θJA

Thermal Resistance from Junction to Ambient

100

1.47

℃/W

①

R_θJC

Thermal Resistance from Junction to Case

℃

Operating Junction and

Storage Temperature Range

T ,

-55~+150

T_stg

www.jscj-elec.com

Rev. - 2.0

12 3 4 5 6

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