Datasheet > CJU15N10

CJU15N10

更新时间： 2024-09-28 14:55:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	2121K
描述
TO-252-2L

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CJU15N10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU15N10 N-Channel Power MOSFET

TO-252-2L

I_D

V_(BR)DSS

R_DS(on)TYP

15A

100V

@10V

70mΩ

DESCRIPTION

1. GATE

2. DRAIN

3. SOURCE

The CJU15N10 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used

in a wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U15N10 = Device code.

Solid dot = Green molding compound device,

if none, the normal device.

XXXX = Code.

U15N10

XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

100

±20

Unit

Gate-Source Voltage

V_GS

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

100

3.5

⑥

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

℃/W

℃

①

R_θJC

-55~+150

T ,

Operating Junction and

T_stg

Storage Temperature Range

Rev. - 2.1

www.jscj-elec.com

12 3 4 5 6

中文翻译

下载PDF

与CJU15N10相关器件

型号	品牌	获取价格	描述	数据表
CJU15SN10	CJ	获取价格	TO-252-2L
CJU20N06A	CJ	获取价格	TO-252-2L
CJU30N03	CJ	获取价格	TO-252-2L
CJU30N10	CJ	获取价格	TO-252-2L
CJU30P03	CJ	获取价格	TO-252-2L
CJU30P03A	CJ	获取价格	TO-252-2L
CJU30P10	CJ	获取价格	TO-252-2L
CJU40P03	CJ	获取价格	TO-252-2L
CJU40P04	CJ	获取价格	TO-252-2L
CJU40P04A	CJ	获取价格	TO-252-2L