Datasheet > CDBQC0140R-HF

CDBQC0140R-HF

更新时间： 2024-02-04 15:52:19

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	103K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBQC0140R-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	260	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

CDBQC0140R-HF 数据手册

SMD Schottky Barrier Diode

CDBQC0140R-HF

Io = 100 mA

VR = 40 Volts

RoHS Device

Halogen Free

0402C/SOD-923F

Features

0.041(1.05)

0.037(0.95)

- Low reverse current

- Majority carrier conduction

0.026(0.65)

0.022(0.55)

- Ultra small mold type

- Exeremely thin / leadless package

Mechanical data

0.022(0.55)

0.018(0.45)

- Case: 0402C/SOD-923F standard package,

molded plastic.

0.012(0.30)

0.008(0.20)

0.001(0.02)

Max.

- Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

- Polarity: Cathode band & B9

- Mounting position: Any

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Circuit Diagram

Dimensions in inches and (millimeter)

Maximum Ratings(at TA=25°C unless otherwise noted)

Symbol

VRRM

Typ

Parameter

Conditions

Min

Max Unit

Repetitive Peak reverse voltage

100

Reverse voltage

Average forward rectified current

Forward current,surge peak

8.3 ms single half sine-wave (1 cycle )

Junction to ambient

IFSM

RΘJA

Thermal resistance

Junction temperature

Storage temperature

200

°C/W

°C

-40

+125

TSTG

°C

Electrical Characteristics(at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max Unit

Forward voltage

IF = 10mA

VR = 10V

0.34

0.45

Reverse current

Capacitance between terminals

VR = 10V, f = 1 MHZ

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

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Comchip Technology CO., LTD.

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中文翻译

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