Datasheet > CDBQR0230L-HF_12

CDBQR0230L-HF_12

更新时间： 2024-01-03 13:56:13

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	127K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBQR0230L-HF_12 数据手册

SMD Schottky Barrier Diode

CDBQR0230L-HF

Io = 200 mA

VR = 30 Volts

RoHS Device

Halogen Free

0402/SOD-923F

Features

-Low forward voltage.

0.041(1.05)

0.037(0.95)

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.026(0.65)

0.022(0.55)

Mechanical data

0.022(0.55)

0.018(0.45)

-Case: 0402/SOD-923F standard package,

0.012(0.30) Typ.

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code: cathode band & BA

-Mounting position: Any.

0.020(0.50) Typ.

Dimensions in inches and (millimeter)

-Weight: 0.001 gram(approx.).

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Repetitive peak reverse voltage

Conditions

Min

VRRM

Reverse voltage

Average forward current

Forward current,surge peak

Power Dissipation

200

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

IFSM

TSTG

125

Storage temperature

Junction temperature

-40

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Forward voltage

IF = 200 mA

VR = 10 V

0.5

Reverse current

REV:C

Page 1

QW-G1096

Comchip Technology CO., LTD.

12 3 4

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