Datasheet > CDBQR40-HF_12

CDBQR40-HF_12

更新时间： 2024-09-28 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	122K
描述
SMD Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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CDBQR40-HF_12 数据手册

SMD Schottky Barrier Diode

CDBQR40-HF

Io = 200 mA

VR = 40 Volts

RoHS Device

Halogen Free

0402/SOD-923F

Features

-Low reverse current.

0.041(1.05)

0.037(0.95)

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.026(0.65)

0.022(0.55)

Mechanical data

0.022(0.55)

0.018(0.45)

-Case: 0402/SOD-923F standard package,

0.012(0.30) Typ.

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code: cathode band & BC

-Mounting position: Any.

0.020(0.50) Typ.

Dimensions in inches and (millimeter)

-Weight: 0.001 gram(approx.).

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

Peak reverse voltage

Reverse voltage

Conditions

Min Typ Max Unit

VRM

RMS reverse voltage

VR(RMS)

Average forward rectified current

200

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

0.6

Power dissipation

TSTG

125

Storage temperature

Junction temperature

-65

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

IF = 1mA

IF = 40mA

0.38

Forward voltage

Reverse current

VR = 30V

0.2

Capacitance between terminals

Reverse recovery time

f = 1 MHz, and 0 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 ohm

Trr

REV:B

Page 1

QW-G1100

Comchip Technology CO., LTD.

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