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CDBQR42 PDF预览

CDBQR42

更新时间: 2024-01-20 00:10:52
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 192K
描述
SMD Schottky Barrier Diode

CDBQR42 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.74
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 V最大非重复峰值正向电流:4 A
元件数量:1最高工作温度:125 °C
最大输出电流:0.2 A最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

CDBQR42 数据手册

 浏览型号CDBQR42的Datasheet PDF文件第2页浏览型号CDBQR42的Datasheet PDF文件第3页浏览型号CDBQR42的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDBQR42/43  
Io = 200 mA  
VR = 30 Volts  
Features  
Low forward voltage.  
0402(1005)  
0.041(1.05)  
0.037(0.95)  
Designed for mounting on small surface.  
Extremely thin/leadless package.  
Majority carrier conduction.  
0.026(0.65)  
0.022(0.55)  
Mechanical data  
Case: 0402(1005) standard package,  
molded plastic.  
0.022(0.55)  
0.018(0.45)  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.012(0.30) Typ.  
Marking code:  
CDBQR42 : BD  
CDBQR43 : BE  
Mounting position: Any  
0.020(0.50) Typ.  
Weight: 0.001 gram(approx.).  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Parameter  
Peak reverse voltage  
Reverse voltage  
Conditions  
Min Typ Max Unit  
VRM  
VR  
30  
30  
V
V
RMS reverse voltage  
VR(RMS)  
IO  
21  
200  
0.5  
V
mA  
A
Average forward rectified current  
Repetitive peak forward current  
IFRM  
8.3 ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
Power dissipation  
IFSM  
PD  
4
A
125  
667  
mW  
Thermal resistance junction  
to ambient air  
O
R
JA  
C/W  
O
Storage temperature  
Junction temperature  
TSTG  
Tj  
-55  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Min  
Max Unit  
Forward voltage  
CDBQR42/43 IF = 200mA  
1
CDBQR42  
IF = 10mA  
IF = 50mA  
IF = 2mA  
0.4  
VF  
V
CDBQR42  
CDBQR43  
CDBQR43  
0.65  
0.33  
0.45  
IF = 15mA  
Reverse current  
VR = 25V  
IR  
0.5  
10  
5
uA  
pF  
Capacitance between terminals  
Reverse recovery time  
f = 1 MHz, and 1 VDC reverse voltage  
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm  
CT  
Trr  
nS  
REV:B  
Page 1  
QW-A1125  
Comchip Technology CO., LTD.  

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