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CDBQR54 PDF预览

CDBQR54

更新时间: 2024-01-31 03:22:00
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
4页 190K
描述
SMD Schottky Barrier Diode

CDBQR54 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.44
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJESD-30 代码:R-PBCC-N2
JESD-609代码:e4最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
最大功率耗散:0.125 W最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Gold (Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

CDBQR54 数据手册

 浏览型号CDBQR54的Datasheet PDF文件第2页浏览型号CDBQR54的Datasheet PDF文件第3页浏览型号CDBQR54的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDBQR54  
Io = 200 mA  
VR = 30 Volts  
Features  
Low forward voltage.  
0402(1005)  
0.041(1.05)  
0.037(0.95)  
Designed for mounting on small surface.  
Extremely thin/leadless package.  
Majority carrier conduction.  
0.026(0.65)  
0.022(0.55)  
Mechanical data  
Case: 0402(1005) standard package,  
molded plastic.  
0.022(0.55)  
0.018(0.45)  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.012(0.30) Typ.  
Marking Code: Cathode band & BF  
Mounting position: Any  
Weight: 0.001 gram(approx.).  
0.020(0.50) Typ.  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Min Typ Max Unit  
Parameter  
Peak reverse voltage  
Reverse voltage  
Conditions  
VRM  
30  
V
VR  
30  
V
RMS reverse voltage  
VR(RMS)  
IO  
21  
200  
0.3  
V
mA  
A
Average forward rectified current  
Repetitive peak forward current  
IFRM  
8.3 ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
IFSM  
0.6  
A
Power dissipation  
PD  
TSTG  
Tj  
125  
mW  
O
Storage temperature  
Junction temperature  
-65  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Min  
Max Unit  
IF = 0.1mA  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
0.24  
0.32  
Forward voltage  
VF  
V
0.4  
0.5  
1
Reverse current  
VR = 25V  
IR  
2
10  
5
uA  
pF  
Capacitance between terminals  
f = 1 MHz, and 1 VDC reverse voltage  
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm  
CT  
Reverse recovery time  
Trr  
nS  
REV:B  
Page 1  
QW-A1122  
Comchip Technology CO., LTD.  

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