Datasheet > CDBS0145

CDBS0145

更新时间： 2024-01-24 00:29:48

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	63K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBS0145 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.92	Base Number Matches：	1

CDBS0145 数据手册

SSMMDD SScchhoottttkky Barrier Diode

CCOOMMCCHHIIPP

www.comchip.com.tw

CDBS0145

Io = 100mA

VR = 45 Volts

Features

Designed for mounting on small surface

Extremely thin package

0805(2012)

0.087(2.20)

0.079(2.00)

Low stored charge

0.016(0.40) Typ

Majority carrier conduction

0.008(R0.20) Typ.

0.055(1.40)

0.047(1.20)

Mechanical data

Case: 0805(2012) Standard package,

molded plastic.

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026.

0.043 (1.10)

0.035(0.90)

Polarity: Indicated by cathode band.

Mounting position: Any.

Dimensions in inches and (millimeter)

Weight: 0.0048 gram. (approximately)

Maximum Rating ( at TA = 25

unless otherwise noted )

Parameter

Repetitive peak reverse voltage

Reverse voltage

Typ Max Unit

Conditions

Symbol Min

VRRM

Average forward current

100

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , Surge peak

1000

IFSM

250

+125

Power Dissipation

Storage temperature

Junction temperature

TSTG

-40

T j

-40

Electrical Characteristics ( at TA = 25 unless otherwise noted )

Conditions

Symbol Min Typ Max

Parameter

Unit

I F = 100 mADC

0.55

Forward voltage

VR = 45 V

Reverse current

f = 1MHz, and 10 VDCreverse voltage

Capacitance between terminals

Page 1

RDS0208011-C

中文翻译

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