Datasheet > CDBT0540-G

CDBT0540-G

更新时间： 2024-01-20 19:25:02

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	66K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBT0540-G 数据手册

SMD Schottky Barrier Diode

CDBT0540-G

RoHS Device

SOT-23

Features

0.119(3.00)

0.110(2.80)

-Small surface mount type.

-Low reverse current and low forward voltage.

-High reliability.

0.056(1.40)

0.047(1.20)

0.006(0.15)

0.002(0.05)

0.083(2.10)

0.066(1.70)

Marking: D3A

0.044(1.10)

0.035(0.90)

0.103(2.60)

0.086(2.20)

0.006(0.15) max

0.007(0.20) min

0.020(0.50)

0.013(0.35)

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak reverse voltage

VRM

DC reverse voltage

Peak surge forward voltage

Mean rectifying current

Power dissipation

IFSM

0.5

250

^OC/W

^OC

Thermal resistance, junction to ambient

Junction temperature

RθJA

500

125

Storage temperature

TSTG

-40 to +125

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ.

Max

Unit

Reverse breakdown voltage

Forward voltage

VBR

IR=100μA

IF=500mA

0.55

VR=10V

μA

Reverse current

VR=30V

VR=0V, f=1MHz

VR=10V, f=1MHz

125

Capacitance between terminals

REV:B

Page 1

QW-BA016

Comchip Technology CO., LTD.

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