CDBU001A

更新时间： 2024-02-11 22:43:43

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管
页数	文件大小	规格书
2页	174K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBU001A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.92	Is Samacsys：	N
Base Number Matches：	1

CDBU001A 数据手册

COMCHIP

SSMMDD SScchhoottttkky Barrier Diode

SMD Diodes Specialist

CDBU001A

Preliminary

Io = 100mA

VR = 30 Volts

Features

Designed for mounting on small surface

Extremely thin package

Low stored charge

0603(1608)

0.071(1.80)

0.063(1.60)

Majority carrier conduction

0.039(1.00)

0.031(0.80)

Mechanical data

Case: 0603 ( 1608 ) Standard package,

molded plastic

0.033(0.85)

0.027(0.70)

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026

0.014(0.35) Typ.

Polarity: Indicated by cathode band

0.012 (0.30) Typ.

Mounting position: Any

0.018(0.45) Typ.

Weight: 0.003 gram (approximately)

Dimensions in inches and (millimeter)

Maximum Rating ( at TA = 25 C unless otherwise noted )

Parameter

Unit

Conditions

Typ Max

Symbol Min

Repetitive peak reverse voltage

Average forward current

100

VRRM, VR

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , surge peak

500

IFSM

Power Dissipation

150

+125

Storage temperature

Junction temperature

TSTG

-40

T j

-40

Electrical Characteristics ( at TA= 25 C unless otherwise noted )

Symbol

Conditions

Min Typ Max

Parameter

Unit

IF = 0.1mA DC

0.24

0.32

0.40

0.50

1.00

Forward voltage 1

IF = 1 mA DC

Forward voltage 2

IF = 10mA DC

Forward voltage 3

IF = 30mA DC

Forward voltage 4

IF = 100mA DC

Forward voltage 5

VR = 25 V

Reverse current

F=1MHz and 10V DC reversevoltage

Capacitance between terminals

REV:A

Page 1

QW-A1003

中文翻译

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