Datasheet > CDBU0320_12

CDBU0320_12

更新时间： 2024-01-05 13:33:42

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	123K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBU0320_12 数据手册

SMD Schottky Barrier Diode

CDBU0320/0330/0340-HF

Io = 350 mA

VR = 20 to 40 Volts

RoHS Device

Halogen Free

0603/SOD-523F

Features

0.071(1.80)

0.063(1.60)

-Low forward voltage.

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.039(1.00)

0.031(0.80)

Mechanical data

-Case: 0603/SOD-523F standard package,

molded plastic.

0.033(0.85)

0.027(0.70)

-Terminals: Gold plated, solderable per

0.014(0.35) Typ.

MIL-STD-750,method 2026.

-Marking code:

CDBU0320-HF : BH

CDBU0330-HF : BJ

CDBU0340-HF : BK

0.012 (0.30) Typ.

0.028(0.70) Typ.

-Mounting position: Any

-Weight: 0.003 gram(approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

CDBU0320 CDBU0330 CDBU0340 Unit

Repetitive Peak reverse voltage

VRRM

Reverse voltage

RMS reverse voltage

VR(RMS)

Average forward rectified current

350

Forward current, surge peak

8.3 ms single half sine-wave

IFSM

1.5

Power dissipation

150

667

Thermal resistance junction

to ambient air

C/W

Storage temperature

Junction temperature

TSTG

-65 TO +125

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

Reverse current

CDBU0320-HF

CDBU0330-HF

CDBU0340-HF

VR = 10V

VR = 20V

VR = 30V

Forward voltage

IF = 20mA

IF = 200mA

0.37

0.60

Capacitance between terminals

Reverse recovery time

f = 1 MHz, and 0 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 ohm

Trr

6.4

REV:A

Page 1

QW-G1076

Comchip Technology CO., LTD.

12 3 4

中文翻译

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