Datasheet > CDBU42-G

CDBU42-G

更新时间： 2024-02-25 05:48:05

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
2页	120K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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CDBU42-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Base Number Matches：	1

CDBU42-G 数据手册

COMCHIP

SSMMDD SScchhoottttkky Barrier Diode

(RoHs Device)

CDBU42/43

SMD Diodes Specialist

Io = 200 mA

VR = 30 Volts

Features

0603(1608)

Low forward voltage.

0.071(1.80)

0.063(1.60)

Designed for mounting on small surface.

Extremely thin / leadless package.

Majority carrier conduction.

0.039(1.00)

0.031(0.80)

Mechanical data

Case: 0603(1608) standard package,

molded plastic.

0.033(0.85)

0.027(0.70)

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

0.014(0.35) Typ.

Polarity: Indicated by cathode band.

Mounting position: Any

0.012 (0.30) Typ.

0.018(0.45) Typ.

Weight: 0.003 gram(approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Min Typ Max Unit

Parameter

Peak reverse voltage

Reverse voltage

Conditions

VRM

RMS reverse voltage

VR(RMS)

200

0.5

Average forward rectified current

Repetitive peak forward current

IFRM

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

Power dissipation

150

Thermal resistance junction

to ambient air

667

C/W

Storage temperature

TSTG

-55

+125

Junction temperature

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

Forward voltage

CDBU42/43 IF = 200mA

CDBU42

IF = 10mA

IF = 50mA

IF = 2mA

0.4

CDBU42

CDBU43

0.65

0.33

0.45

IF = 15mA

Reverse current

Capacitance between terminals

Reverse recovery time

VR = 25V

0.5

f = 1 MHz, and 1 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 ohm

Trr

REV:A

Page 1

QW-A1043

中文翻译

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