COMCHIP
SSMMDD SScchhoottttkky Barrier Diode
(RoHs Device)
CDBU42/43
SMD Diodes Specialist
Io = 200 mA
VR = 30 Volts
Features
0603(1608)
Low forward voltage.
0.071(1.80)
0.063(1.60)
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
0.033(0.85)
0.027(0.70)
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
0.014(0.35) Typ.
Polarity: Indicated by cathode band.
Mounting position: Any
0.012 (0.30) Typ.
0.018(0.45) Typ.
Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
O
Maximum Rating (at TA=25 C unless otherwise noted)
Symbol
Min Typ Max Unit
Parameter
Peak reverse voltage
Reverse voltage
Conditions
VRM
30
30
V
V
VR
RMS reverse voltage
VR(RMS)
21
200
0.5
V
mA
A
Average forward rectified current
Repetitive peak forward current
IO
IFRM
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Forward current,surge peak
IFSM
4
A
Power dissipation
PD
150
mW
Thermal resistance junction
to ambient air
O
R
JA
667
C/W
O
Storage temperature
TSTG
-55
+125
C
O
Junction temperature
Tj
+125
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Min
Max Unit
Forward voltage
CDBU42/43 IF = 200mA
1
CDBU42
IF = 10mA
IF = 50mA
IF = 2mA
0.4
VF
V
CDBU42
CDBU43
CDBU43
0.65
0.33
0.45
IF = 15mA
Reverse current
Capacitance between terminals
Reverse recovery time
VR = 25V
IR
0.5
10
5
uA
pF
f = 1 MHz, and 1 VDC reverse voltage
CT
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
nS
REV:A
Page 1
QW-A1043