Datasheet > CDBU40-HF

CDBU40-HF

更新时间： 2024-01-06 17:07:29

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	193K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBU40-HF 数据手册

SMD Schottky Barrier Diode

SMD Diodes Specialist

(RoHS Device)

CDBU40-HF

Io = 200 mA

VR = 40 Volts

Features

Halogen free.

0603(1608)

0.071(1.80)

0.063(1.60)

Low forward voltage.

Designed for mounting on small surface.

Extremely thin / leadless package.

Majority carrier conduction.

0.039(1.00)

0.031(0.80)

Mechanical data

0.033(0.85)

0.027(0.70)

Case: 0603(1608) standard package,

molded plastic.

0.014(0.35) Typ.

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

0.012 (0.30) Typ.

Marking code: cathode band & BC

Mounting position: Any

0.028(0.70) Typ.

Weight: 0.003 gram(approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

Peak reverse voltage

Reverse voltage

Conditions

Min Typ Max Unit

VRM

RMS reverse voltage

VR(RMS)

Average forward rectified current

200

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

0.6

Power dissipation

TSTG

150

Storage temperature

Junction temperature

-65

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

IF = 1mA

IF = 40mA

0.38

Forward voltage

Reverse current

VR = 30V

0.2

Capacitance between terminals

Reverse recovery time

f = 1 MHz, and 0 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 ohm

Trr

REV:A

Page 1

QW-G1012

Comchip Technology CO., LTD.

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