CDBU0145

更新时间： 2024-02-20 06:29:29

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	151K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBU0145 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	7.88
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.55 V	最大非重复峰值正向电流：	1 A
元件数量：	1	最高工作温度：	125 °C
最大输出电流：	0.1 A	最大重复峰值反向电压：	50 V
子类别：	Rectifier Diodes	表面贴装：	YES
技术：	SCHOTTKY

CDBU0145 数据手册

COMCHIP

SSMMDD SScchhoottttkky Barrier Diode

(Lead-free Device)

CDBU0145

SMD Diodes Specialist

Io = 100 mA

VR = 45 Volts

Features

Designed for mounting on small surface.

0603(1608)

Extremely thin/leadless package.

0.071(1.80)

0.063(1.60)

Low leakage current (IR=0.1uA typ.

@VR=10V).

0.039(1.00)

0.031(0.80)

Majority carrier conduction.

Mechanical data

0.033(0.85)

0.027(0.70)

Case: 0603 (1608) Standard package ,

molded plastic.

0.014(0.35) Typ.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

0.012 (0.30) Typ.

Polarity: Indicated by cathode band.

0.018(0.45) Typ.

Mounting position: Any.

Dimensions in inches and (millimeter)

Weight: 0.003 gram (approximately).

Maximum Rating ( at TA = 25 C unless otherwise noted )

Parameter

Typ Max Unit

Symbol Min

Conditions

Repetitive peak reverse voltage

Reverse voltage

VRRM

Average forward current

100

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , surge peak

1000

IFSM

TSTG

T j

Power Dissipation

150

+125

Storage temperature

Junction temperature

-40

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

Conditions

Symbol Min Typ Max

Parameter

Unit

I F = 100 mADC

0.55

Forward voltage

VR = 10 V

Reverse current

f = 1MHz, and 10 VDCreverse voltage

Capacitance between terminals

REV:A

Page 1

QW-A1019

中文翻译

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