Datasheet > CDBU0230L

CDBU0230L

更新时间： 2024-01-08 23:39:29

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	124K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBU0230L 数据手册

COMCHIP

SSMMDD SScchhoottttkky Barrier Diode

(Lead-free Device)

CDBU0230L

SMD Diodes Specialist

Io = 200 mA

VR = 30 Volts

Features

Low forward Voltage

0603(1608)

Designed for mounting on small surface.

Extremely thin/leadless package.

Majority carrier conduction.

0.071(1.80)

0.063(1.60)

0.039(1.00)

0.031(0.80)

Mechanical data

Case: SOD-523F (1608) Standard

package , molded plastic.

0.033(0.85)

0.027(0.70)

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

0.014(0.35) Typ.

Polarity: Indicated by cathode band.

0.012 (0.30) Typ.

Mounting position: Any.

0.018(0.45) Typ.

Weight: 0.003 gram (approximately).

Dimensions in inches and (millimeter)

Maximum Rating ( at TA = 25 C unless otherwise noted )

Parameter

Symbol

Typ Max Unit

Min

Conditions

Repetitive peak reverse voltage

Reverse voltage

VRRM

Average forward rectified current

200

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , surge peak

IFSM

Storage temperature

TSTG

-40

+125

Junction temperature

T j

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

Conditions

Symbol Min Typ Max

Parameter

Unit

I F = 200 mA

0.5

Forward voltage

VR = 10 V

Reverse current

REV:A

Page 1

QW-A1025

中文翻译

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