Datasheet > CDBU0245

CDBU0245

更新时间： 2024-01-28 18:58:03

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	70K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBU0245 数据手册

SSMMDD SScchhoottttkky Barrier Diode

(Lead-free Device)

CDBU0245

CCOOMMCCHHIIPP

www.comchip.com.tw

Io = 200 mA

VR = 45 Volts

Features

Designed for mounting on small surface.

0603(1608)

Extremely thin/leadless package.

0.071(1.80)

0.063(1.60)

Low leakage current (IR=0.1uA typ.

@VR=10V).

0.039(1.00)

0.031(0.80)

Majority carrier conduction.

Mechanical data

0.033 (0.85)

0.027 (0.70)

Case: 0603 (1608) Standard package ,

molded plastic.

0.010(0.25) Typ.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

0.012 (0.30) Typ.

Polarity: Indicated by cathode band.

0.014(0.35) Typ.

Mounting position: Any.

Dimensions in inches and (millimeter)

Weight: 0.003 gram (approximately).

Maximum Rating ( at TA = 25 C unless otherwise noted )

Parameter

Typ Max Unit

Symbol Min

Conditions

Repetitive peak reverse voltage

Reverse voltage

VRRM

Average forward current

200

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , surge peak

2000

IFSM

TSTG

T j

Power Dissipation

150

+125

Storage temperature

Junction temperature

-40

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

Conditions

Symbol Min Typ Max

Parameter

Unit

I F = 200 mADC

0.55

Forward voltage

VR = 10 V

Reverse current

f = 1MHz, and 10 VDCreverse voltage

Capacitance between terminals

RDS0301009-B

中文翻译

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