Datasheet > CDBU0230-N

CDBU0230-N

更新时间： 2024-01-24 03:29:20

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	81K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBU0230-N 数据手册

SSMMDD SScchhoottttkky Barrier Diode

(Lead-free Device)

CDBU0230-N

SMD Diodes Specialist

Io = 200 mA

VR = 30 Volts

Features

Designed for mounting on small surface.

Extremely thin/leadless package.

Low drop-down voltage.

0603(1608)

0.071(1.80)

0.063(1.60)

Majority carrier conduction.

0.035(0.90)

0.029(0.75)

Mechanical data

Case: 0603 (1608) Standard package ,

molded plastic.

0.033(0.85)

0.027(0.70)

0.014(0.35) Typ.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

Polarity: Indicated by cathode band

0.012 (0.30) Typ.

Mounting position: Any.

0.028(0.70) Typ.

Weight: 0.003 gram (approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Repetitive peak reversevoltage

VRRM

Reverse voltage

Average forward current

200

8.3ms single halfsine-wave superimposed

on rate load(JEDECmethod)

Forward current,surge peak

IFSM

2000

Power Dissipation

TSTG

150

Storage temperature

-40

+125

Junction temperature

Electrical Characteristics (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Forward voltage

IF = 200 mADC

0.50

Reverse current

VR = 30 V

Capacitance between terminals f = 1 MHZ,and 10VDC reversevoltage

REV:B

Page 1

QW-A1050

中文翻译

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