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CDBT-40S-G PDF预览

CDBT-40S-G

更新时间: 2024-01-26 17:47:08
品牌 Logo 应用领域
上华 - COMCHIP 小信号肖特基二极管
页数 文件大小 规格书
4页 73K
描述
Small Signal Schottky Diodes

CDBT-40S-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.69
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDBT-40S-G 数据手册

 浏览型号CDBT-40S-G的Datasheet PDF文件第2页浏览型号CDBT-40S-G的Datasheet PDF文件第3页浏览型号CDBT-40S-G的Datasheet PDF文件第4页 
COMCHIP  
Small Signal Schottky Diodes  
SMD Diodes Specialist  
CDBT-40/S/C/A-G  
Reverse Voltage: 40 Volts  
Forward Current: 200 mA  
RoHS Device  
Features  
SOT-23  
-Design for mounting on small surface.  
0.118(3.00)  
0.110(2.80)  
-High speed switching application, circuit  
protection.  
3
-Low forward voltage drop.  
0.055(1.40)  
0.047(1.20)  
Mechanical data  
-Case: SOT-23, molded plastic.  
1
2
0.079(2.00)  
0.071(1.80)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
0.006(0.15)  
0.002(0.05)  
0.041(1.05)  
0.035(0.90)  
-Approx. weight: 0.0078 grams  
0.100(2.55)  
0.089(2.25)  
Circuit diagram  
0.004(0.10) max  
0.008(0.20) min  
3
3
3
3
0.020(0.50)  
0.012(0.30)  
1
2
1
2
1
2
1
2
CDBT-40-G  
CDBT-40S-G  
CDBT-40C-G  
CDBT-40A-G  
Marking Code: 46  
Dimensions in inches and (millimeter)  
Marking Code: 43 Marking Code: 44 Marking Code: 45  
Maximum Ratings (at Ta=25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
40  
V
Forward continuous current  
Power dissipation  
IFM  
PD  
200  
200  
mA  
mW  
°C/W  
°C  
Thermal resistance, junction to ambient  
Junction temperature  
RθJA  
TJ  
625  
125  
Storage temperature  
TSTG  
-65 to +125  
°C  
Electrical Characteristics (at Ta=25°C unless otherwise noted)  
Parameter  
Reverse breakdown voltage  
Reverse voltage leakage current  
Symbol  
Conditions  
Min.  
Max.  
Unit  
IR=10μA  
VBR  
IR  
40  
V
VR=30V  
200  
nA  
IF=1mA  
IF=40mA  
380  
1000  
VF  
mV  
pF  
Forward voltage  
Diode capacitance  
Reverse recovery time  
VR=0V, f=1.0MHz  
CD  
Trr  
5
5
Irr=1mA, IF=IR=10mA,  
RL=100Ω  
nS  
REV:C  
Page 1  
QW-BA001  
Comchip Technology CO., LTD.  

CDBT-40S-G 替代型号

型号 品牌 替代类型 描述 数据表
BAS40-04-7-F DIODES

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SURFACE MOUNT SCHOTTKY BARRIER DIODE

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