SMD Schottky Barrier Diode
CDBS120-HF Thru. CDBS160-HF
Forward current: 1.0A
Reverse voltage: 20 to 60V
RoHS Device
Halogen Free
0805
0.083 (2.10)
0.075 (1.90)
Features
-Low power loss, High efficiency.
0.055 (1.40)
0.047 (1.20)
R 0.011(0.275)
-High current capability, low VF
0.040(1.00)
Typ.
-Plastic package has underwriters laboratory
flammability classification 94V-0.
0.022 (0.55)
0.022(0.55)
0.014(0.35)
Mechanical Data
0.014 (0.35)
-Case: Packed with FRP substrate and
0.039 (1.00)
0.028 (0.70)
epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
Dimensions in inches and (millimeter)
-Polarity: Laser cathode band marking.
.-Weight: 0.005 grams (approx).
Circuit diagram
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Symbol
CDBS120-HF
CDBS140-HF
CDBS160-HF
Parameter
Unit
V
Repetitive peak reverse voltage
VRM
20
40
1
60
Average forward current
IF(AV)
A
Peak forward surge current
IFSM
10
A
@8.3ms single half sine-wave
Operating junction temperature range
Storage temperature
TJ
-55 to +125
-55 to +150
°C
°C
TSTG
-55 ~ +150
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Parameter
Conditions
Type
Unit
IF=0.1A
IF=0.5A
IF=1.0A
-
-
-
0.32
0.39
0.42
-
-
CDBS120-HF
0.45
-
-
-
-
-
IF=0.1A
IF=0.5A
IF=1.0A
0.33
0.40
0.47
Forward voltage (Note1)
CDBS140-HF
CDBS160-HF
VF
V
0.50
-
-
-
-
-
IF=0.1A
IF=0.5A
IF=1.0A
0.38
0.50
0.62
0.65
0.20
-
-
-
-
-
Reverse peak reverse current (Note1)
Junction capacitance
VR=Max.VRRM, Ta=25°C
VR=4V, f=1.0MHz
IRRM
0.028
115
120
28
mA
pF
Cj
-
-
Junction to ambient (Note 2)
Junction to lead (Note 2)
RΘJA
RΘJL
ºC/W
ºC/W
Thermal resistance
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JB059
Comchip Technology CO., LTD.