Datasheet > CDBS00340

CDBS00340

更新时间： 2024-02-28 06:58:59

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	63K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

技术参数
数据手册

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CDBS00340 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.79	Base Number Matches：	1

CDBS00340 数据手册

SSMMDD SScchhoottttkky Barrier Diode

CCOOMMCCHHIIPP

www.comchip.com.tw

CDBS00340

Io = 30mA

VR = 40 Volts

Features

Designed for mounting on small surface

Extremely thin package

0805(2012)

0.087(2.20)

0.079(2.00)

Low stored charge

0.016(0.40) Typ

Majority carrier conduction

0.008(R0.20) Typ.

0.055(1.40)

0.047(1.20)

Mechanical data

Case: 0805(2012) Standard package,

molded plastic.

Terminals: Solder plated, solderable per

MIL-STD-750, method 2026.

0.043 (1.10)

0.035(0.90)

Polarity: Indicated by cathode band.

Mounting position: Any.

Dimensions in inches and (millimeter)

Weight: 0.0048 gram. (approximately)

Maximum Rating ( at TA = 25 C unless otherwise noted )

Parameter

Typ Max Unit

Symbol Min

Conditions

Repetitive peak reverse voltage

Reverse voltage

VRRM

Average forward current

8.3 ms singlehalf sine-wave superimposed

on rate load( JEDEC method)

Forward current , surge peak

500

IFSM

Power Dissipation

200

+125

TSTG

T j

Storage temperature

Junction temperature

-40

Electrical Characteristics ( at TA = 25 C unless otherwise noted )

Conditions

Symbol Min Typ Max

Parameter

Unit

IF = 1 mA DC

0.37

Forward voltage

VR = 40 V

VR = 30 V

Reverse current

0.5

f = 1MHz, and 1 VDCreverse voltage

Capacitance between terminals

Page 1

RDS0208005-C

中文翻译

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