Datasheet > CDBQR42_12

CDBQR42_12

更新时间： 2024-01-26 03:32:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	122K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBQR42_12 数据手册

SMD Schottky Barrier Diode

CDBQR42/43-HF

Io = 200 mA

VR = 30 Volts

RoHS Device

Halogen Free

0402/SOD-923F

0.041(1.05)

0.037(0.95)

Features

-Low forward voltage.

-Designed for mounting on small surface.

-Extremely thin/leadless package.

-Majority carrier conduction.

0.026(0.65)

0.022(0.55)

Mechanical data

0.022(0.55)

0.018(0.45)

-Case: 0402/SOD-923F standard package,

molded plastic.

0.012(0.30) Typ.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Marking code:

CDBQR42-HF : BD

CDBQR43-HF : BE

0.020(0.50) Typ.

-Mounting position: Any

-Weight: 0.001 gram(approx.).

Dimensions in inches and (millimeter)

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Parameter

Peak reverse voltage

Reverse voltage

Conditions

Min Typ Max Unit

VRM

RMS reverse voltage

VR(RMS)

200

0.5

Average forward rectified current

Repetitive peak forward current

IFRM

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

Power dissipation

IFSM

125

667

Thermal resistance junction

to ambient air

C/W

Storage temperature

Junction temperature

TSTG

-55

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Min

Max Unit

Forward voltage

CDBQR42/43-HF IF = 200mA

CDBQR42-HF

IF = 10mA

IF = 50mA

IF = 2mA

0.4

CDBQR42-HF

CDBQR43-HF

0.65

0.33

0.45

IF = 15mA

Reverse current

VR = 25V

0.5

Capacitance between terminals

Reverse recovery time

f = 1 MHz, and 1 VDC reverse voltage

IF=IR=10mA,Irr=0.1xIR,RL=100 ohm

Trr

REV:B

Page 1

QW-G1101

Comchip Technology CO., LTD.

12 3 4

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