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CDBQR40-HF PDF预览

CDBQR40-HF

更新时间: 2024-01-18 13:06:00
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 192K
描述
SMD Schottky Barrier Diode

CDBQR40-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.61配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.38 VJESD-30 代码:R-PBCC-N2
JESD-609代码:e4最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260最大功率耗散:0.125 W
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Gold (Au)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30

CDBQR40-HF 数据手册

 浏览型号CDBQR40-HF的Datasheet PDF文件第2页浏览型号CDBQR40-HF的Datasheet PDF文件第3页浏览型号CDBQR40-HF的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDBQR40-HF  
Io = 200 mA  
VR = 40 Volts  
Features  
Halogen free.  
0402(1005)  
0.041(1.05)  
0.037(0.95)  
Low reverse current.  
Designed for mounting on small surface.  
Extremely thin/leadless package.  
Majority carrier conduction.  
0.026(0.65)  
0.022(0.55)  
Mechanical data  
0.022(0.55)  
0.018(0.45)  
Case: 0402(1005) standard package,  
molded plastic.  
0.012(0.30) Typ.  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
Marking Code: Cathode band & BC  
Mounting position: Any  
0.020(0.50) Typ.  
Weight: 0.001 gram(approx.).  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Parameter  
Peak reverse voltage  
Reverse voltage  
Conditions  
Min Typ Max Unit  
VRM  
VR  
40  
40  
V
V
RMS reverse voltage  
VR(RMS)  
IO  
28  
V
Average forward rectified current  
200  
mA  
8.3 ms single half sine-wave superimposed  
on rate load(JEDEC method)  
Forward current,surge peak  
IFSM  
0.6  
A
Power dissipation  
PD  
TSTG  
Tj  
125  
mW  
O
Storage temperature  
Junction temperature  
-65  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Min  
Max Unit  
IF = 1mA  
IF = 40mA  
0.38  
1
Forward voltage  
VF  
V
Reverse current  
VR = 30V  
IR  
0.2  
5
uA  
pF  
Capacitance between terminals  
Reverse recovery time  
f = 1 MHz, and 0 VDC reverse voltage  
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm  
CT  
Trr  
5
nS  
REV:B  
Page 1  
QW-G1100  
Comchip Technology CO., LTD.  

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