Datasheet > CDBQR00340-HF_12

CDBQR00340-HF_12

更新时间： 2024-02-12 22:27:21

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	127K
描述
SMD Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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CDBQR00340-HF_12 数据手册

SMD Schottky Barrier Diode

CDBQR00340-HF

Io = 30 mA

VR = 40 Volts

RoHS Device

Halogen Free

0402/SOD-923F

Features

0.041(1.05)

0.037(0.95)

-Designed for mounting on small surface.

-Extremely thin package.

-Low stored charge.

0.026(0.65)

0.022(0.55)

-Majority carrier conduction.

0.022(0.55)

0.018(0.45)

Mechanical data

-Case: 0402/SOD-923F standard package,

0.012(0.30) Typ.

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Polarity: Indicated by cathode band.

-Mounting position: Any

0.020(0.50) Typ.

Dimensions in inches and (millimeter)

-Weight: 0.001 gram(approx.).

Maximum Rating (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Repetitive peak reverse voltage

Reverse voltage

Conditions

Min

VRRM

Average forward current

8.3 ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

500

Power Dissipation

TSTG

200

Sunction temperature

Junction temperature

-40

+125

Electrical Characteristics (at TA=25 C unless otherwise noted)

Typ

Max Unit

Symbol

Parameter

Conditions

Min

Forward voltage

IF = 1 mA DC

0.37

VR = 30V

VR = 40V

0.50

1.00

Reverse current

Capacitance between terimnals

F = 1 MHZ and 1 VDC reverse voltage

1.5

REV:A

Page 1

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Comchip Technology CO., LTD.

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