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CDBQR0230L-HF PDF预览

CDBQR0230L-HF

更新时间: 2024-09-28 06:47:07
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 198K
描述
SMD Schottky Barrier Diode

CDBQR0230L-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.43
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JESD-30 代码:R-PBCC-N2JESD-609代码:e4
最大非重复峰值正向电流:1 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
最大功率耗散:0.125 W最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Gold (Au)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

CDBQR0230L-HF 数据手册

 浏览型号CDBQR0230L-HF的Datasheet PDF文件第2页浏览型号CDBQR0230L-HF的Datasheet PDF文件第3页浏览型号CDBQR0230L-HF的Datasheet PDF文件第4页 
SMD Schottky Barrier Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDBQR0230L-HF  
VR = 30 Volts  
Io = 200 mA  
0402(1005)  
Features  
0.041(1.05)  
0.037(0.95)  
Halogen free.  
Low forward voltage.  
0.026(0.65)  
0.022(0.55)  
Designed for mounting on small surface.  
Extremely thin / leadless package.  
Majority carrier conduction.  
0.022(0.55)  
0.018(0.45)  
Mechanical data  
0.012(0.30) Typ.  
Case: 0402(1005) standard package,  
molded plastic.  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
Marking code: cathode band & BA  
Mounting position: Any.  
0.020(0.50) Typ.  
Dimensions in inches and (millimeter)  
Weight: 0.001 gram(approx.).  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Repetitive peak reverse voltage  
Conditions  
Min  
VRRM  
35  
V
Reverse voltage  
VR  
30  
V
Average forward current  
Forward current,surge peak  
Power Dissipation  
IO  
200  
mA  
8.3ms single half sine-wave superimposed  
on rate load(JEDEC method)  
IFSM  
1
A
PD  
TSTG  
Tj  
125  
mW  
O
Storage temperature  
Junction temperature  
-40  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
Forward voltage  
IF = 200 mA  
VR = 10 V  
VF  
0.5  
V
Reverse current  
IR  
30  
uA  
REV:C  
Page 1  
QW-G1096  
Comchip Technology CO., LTD.  

CDBQR0230L-HF 替代型号

型号 品牌 替代类型 描述 数据表
CDBQR0230L COMCHIP

完全替代

SMD Schottky Barrier Diode

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