Datasheet > CDBQC0530L-HF

CDBQC0530L-HF

更新时间： 2024-02-04 03:48:51

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	81K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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CDBQC0530L-HF 数据手册

SMD Schottky Barrier Diodes

Comchip

S M D D i o d e S p e c i a l i s t

CDBQC0530L-HF

Io = 500mA

VR = 30V

RoHS Device

Halogen Free

0402C/SOD-923F

Features

0.041(1.05)

0.037(0.95)

- Low forward voltage.

- Designed for mounting on small surface.

- Extremely thin package.

0.026(0.65)

0.022(0.55)

- Majority carrier conduction.

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

0.022(0.55)

0.018(0.45)

0.012(0.30)

0.008(0.20)

- Terminals: Matte tin plated, solderable per

0.001(0.02)

Max.

MIL-STD-750, method 2026.

- Polarity: Color band denotes cathode end.

- Mounting position: Any

- Weight: 0.001 grams(approx.).

0.022(0.55)

0.018(0.45)

Circuit Diagram

Dimensions in inches and (millimeter)

Maximum Ratings(at TA=25°C unless otherwise noted)

Symbol

Typ.

Parameter

Reverse stand-off voltage

DC reverse voltage

Conditions

Min.

Max. Unit

VRRM

Mean rectifying current

500

8.3ms single half sine-wave

superimposed on rate load,

1cycle (JEDEC method)

Peak forward surge current

IFSM

Thermal resistance from junction to ambient

Junction temperature range

RθJA

220

°C/W

-40

+125

Storage temperature range

TSTG

Electrical Characteristics(at TA=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Typ.

Min.

Max. Unit

IF = 10mA

0.25

Forward voltage

IF = 100mA

0.34

0.45

200

IF = 500mA

VR = 30V, TA=25°C

Reverse current

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

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Comchip Technology CO., LTD.

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中文翻译

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