BZT03C82

更新时间： 2024-09-20 22:50:23

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管测试
页数	文件大小	规格书
5页	70K
描述
Silicon Z-Diodes and Transient Voltage Suppressors

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中文翻译

获取价格

数据手册

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BZT03C82 数据手册

BZT03C...

Vishay Telefunken

Silicon Z–Diodes and Transient Voltage Suppressors

Features

Glass passivated junction

Hermetically sealed package

Clamping time in picoseconds

Applications

94 9539

Medium power voltage regulators and medium

power transient suppression circuits

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Test Conditions

l=10mm, T =25 C

Type Symbol

Value

3.25

1.3

600

Unit

T =25 C

amb

Repetitive peak reverse power dissipation

Non repetitive peak surge power dissipation t =100 s, T =25 C

Junction temperature

ZRM

ZSM

175

Storage temperature range

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

l=10mm, T =constant

on PC board with spacing 25mm

Symbol

Value

100

Unit

K/W

thJA

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.5A

Type

Symbol Min

Typ Max Unit

1.2

Document Number 85599

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (5)

12 3 4 5

中文翻译

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