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BYQ30E-200,127

更新时间: 2024-09-28 19:47:43
品牌 Logo 应用领域
恩智浦 - NXP 超快软恢复二极管快速软恢复二极管局域网超快速软恢复能力电源
页数 文件大小 规格书
8页 49K
描述
BYQ30E-200

BYQ30E-200,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.10.00.70风险等级:5.36
应用:ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:88 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BYQ30E-200,127 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYQ30E, BYQ30EB, BYQ30ED series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
VR = 150 V/ 200 V  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VF 0.95 V  
IO(AV) = 16 A  
IRRM = 0.2 A  
trr 25 ns  
a1  
1
a2  
3
k
2
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYQ30E series is supplied in the SOT78 conventional leaded package.  
The BYQ30EB series is supplied in the SOT404 surface mounting package.  
The BYQ30ED series is supplied in the SOT428 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT428  
PIN  
1
DESCRIPTION  
tab  
tab  
tab  
anode 1  
cathode 1  
anode 2  
2
3
2
2
1
3
1
3
1 2 3  
tab cathode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
BYQ30E/ BYQ30EB/ BYQ30ED  
-150  
-200  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
150  
200  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
150  
150  
200  
200  
VR  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tmb 104 ˚C  
square wave; δ = 0.5; Tmb 104 ˚C  
16  
16  
IFRM  
IFSM  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
80  
88  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; with reapplied VRRM(max)  
tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
Tj  
Peak repetitive reverse  
surge current per diode  
-
0.2  
0.2  
A
A
Peak non-repetitive reverse tp = 100 µs  
surge current per diode  
Operating junction  
-
-
150  
150  
˚C  
˚C  
temperature  
Storage temperature  
Tstg  
- 40  
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
October 1998  
1
Rev 1.200  

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