Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30ED series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high efficiency
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting, featuring low forward
voltage drop, ultra-fast recovery
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
BYQ30ED-
100
100
150
150
200
200
VRRM
Repetitive peak reverse
voltage
V
times
and
soft
recovery
VF
IO(AV)
Forward voltage
0.95
16
0.95
16
0.95
16
V
A
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and ESD capability. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
trr
IRRM
25
0.2
25
0.2
25
0.2
ns
A
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
no connection
tab
k
1
a
2
2
cathode
anode
3
2
tab cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
100
100
100
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
IO(AV)
Output current (both diodes
square wave
-
16
A
conducting)1
δ = 0.5; Tmb ≤ 104 ˚C
IO(RMS)
IFRM
RMS forward current
-
-
23
16
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Tmb ≤ 104 ˚C
IFSM
Non-repetitive peak forward
current per diode
t = 10 ms
-
-
100
110
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t
IRRM
I2t for fusing
t = 10 ms
-
-
50
0.2
A2s
A
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
IRSM
Non-repetitive peak reverse
current per diode
tp = 100 µs
-
0.2
A
Tstg
Tj
Storage temperature
-40
-
150
150
˚C
˚C
Operating junction temperature
1 Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000