Datasheet > BYQ42E-200

BYQ42E-200

更新时间： 2024-09-29 01:26:31

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	383K
描述
Dual ultrafast power diode

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BYQ42E-200 数据手册

BYQ42E-200

Dual ultrafast power diode

Rev.01 - 5 June 2018

Product data sheet

1. General description

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.

2. Features and beneﬁts

•

Fast switching

•

Low thermal resistance

High thermal cycling performance

Very low forward voltage drop

High reverse surge capability

Soft recovery characteristic

3. Applications

•

Output rectiﬁers in high-frequency switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_O(AV)

I_FSM

repetitive peak reverse

voltage

200

average forward current δ = 0.5; T_mb≤ 114 °C; SQW;

Fig. 1; Fig. 2; Fig. 3

average output current

δ = 0.5; T_mb≤ 114 °C; SQW; both diodes

conducting

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; SIN; per diode;

Fig. 4

150

t_p= 8.3 ms; T_j(init)= 25 °C; SIN; per diode

165

V_ESD

electrostatic discharge

voltage

HBM; all pins; C =250 pF; R = 1.5 kΩ

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 15 A; T_j= 25 °C; Fig. 6

I_F= 30 A; T_j= 150 °C; Fig. 6

I_F= 15 A; T_j= 150 °C; Fig. 6

0.95

1.05

1.2

0.78

0.85

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; ramp recovery; Fig. 7

12 3 4 5 6 7...10

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