BYQ60EWSERIES

更新时间： 2024-11-10 23:38:59

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
6页	59K
描述
Rectifier diodes ultrafast. rugged

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BYQ60EWSERIES 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYQ60EW series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 150 V/ 200 V

V_F≤ 0.85 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

I_O(AV)= 60 A

I_RRM≤ 0.2 A

t_rr≤ 35 ns

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Dual, common cathode, ultra-fast,

epitaxial rectifier diodes intended

for use as output rectifiers in high

frequency switched mode power

supplies.

DESCRIPTION

anode 1

cathode

The BYQ60EW seriesis suppliedin

the conventional leaded SOT429

(TO247) package.

anode 2

cathode

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYQ60EW

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave

(both diodes conducting) δ = 0.5; T_mb≤ 82 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_mb≤ 82 ˚C

t = 10 ms

380

414

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge

capacitor voltage

Human body model;

C = 250 pF; R = 1.5 kΩ

December 1998

Rev 1.000

12 3 4 5 6

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