Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ40EW series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
1
a2
3
IO(AV) = 40 A
IRRM ≤ 0.2 A
k
2
trr ≤ 30 ns
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
anode 1
cathode
1
2
The BYQ40EW seriesis suppliedin
the conventional leaded SOT429
(TO247) package.
3
anode 2
cathode
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYQ40EW
-150
150
150
150
-200
200
200
200
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
IO(AV)
IFRM
IFSM
Average rectified output current square wave
(both diodes conducting) δ = 0.5; Tmb ≤ 110 ˚C
-
-
40
40
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
current per diode
Tmb ≤ 110 ˚C
t = 10 ms
-
-
300
325
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
IRRM
IRSM
-
-
0.2
0.2
A
A
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
-
8
kV
December 1998
1
Rev 1.000