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BYQ40EWSERIES PDF预览

BYQ40EWSERIES

更新时间: 2024-11-09 23:38:59
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
6页 58K
描述
Rectifier diodes ultrafast. rugged

BYQ40EWSERIES 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYQ40EW series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 150 V/ 200 V  
VF 0.85 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
a1  
1
a2  
3
IO(AV) = 40 A  
IRRM 0.2 A  
k
2
trr 30 ns  
GENERAL DESCRIPTION  
PINNING  
SOT429 (TO247)  
Dual, common cathode, ultra-fast,  
epitaxial rectifier diodes intended  
for use as output rectifiers in high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
anode 1  
cathode  
1
2
The BYQ40EW seriesis suppliedin  
the conventional leaded SOT429  
(TO247) package.  
3
anode 2  
cathode  
tab  
2
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYQ40EW  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
(both diodes conducting) δ = 0.5; Tmb 110 ˚C  
-
-
40  
40  
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;  
per diode  
Non-repetitive peak forward  
current per diode  
Tmb 110 ˚C  
t = 10 ms  
-
-
300  
325  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge  
capacitor voltage  
Human body model;  
C = 250 pF; R = 1.5 kΩ  
-
8
kV  
December 1998  
1
Rev 1.000  

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