Datasheet > BYQ30EX-150

BYQ30EX-150

更新时间： 2024-11-14 22:07:23

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
6页	52K
描述
Rectifier diodes ultrafast, rugged

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数据手册

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BYQ30EX-150 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYQ30EX series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 150 V/ 200 V

V_F≤ 0.95 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Isolated mounting tab

I_O(AV)= 16 A

I_RRM≤ 0.2 A

t_rr≤ 25 ns

GENERAL DESCRIPTION

PINNING

SOT186A

Ultra-fast, epitaxial rectifier diodes

intended for use as output rectifiers

in high frequency switched mode

power supplies.

DESCRIPTION

anode 1

cathode

case

The BYQ30EX series is supplied in

the conventional leaded SOT186A

package.

anode 2

isolated

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

MAX.

UNIT

BYQ30EX

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave

(both diodes conducting)¹

δ = 0.5; T_hs≤ 59 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_hs≤ 59 ˚C

t = 10 ms

t = 8.3 ms

100

110

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge

capacitor voltage

Human body model;

C = 250 pF; R = 1.5 kΩ

1 Neglecting switching and reverse current losses.

October 1998

Rev 1.200

12 3 4 5 6

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