Datasheet > BUZ80AC67078-S1309-A3

BUZ80AC67078-S1309-A3

更新时间： 2024-11-25 23:38:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	180K
描述
TRANSISTOR TO 220 MOSFET N KANAL

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BUZ80AC67078-S1309-A3 数据手册

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BUZ 80A

SIPMOS Power Transistor

• N channel

• Enhancement mode

Pin 1

Pin 2

Pin 3

Type

)

DS(on

Package

Ordering Code

BUZ 80A

800 V

3 A

3 Ω

TO-220 AB

C67078-A1309-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

800

DGR

Ω

= 20 k

800

Continuous drain current

T = 50 °C

Pulsed drain current

Dpuls

T = 25 °C

Gate source voltage

Power dissipation

± 20

tot

T = 25 °C

Operating temperature

Storage temperature

-55 ... ...+ 150 °C

-55 ... ...+ 150

stg

≤

Thermal resistance, chip case

1.67

K/W

thJC

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

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